gen ii solid-source machine (Varian Medical)
90
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Varian Medical
gen ii solid-source machine
Gen Ii Solid Source Machine, supplied by Varian Medical, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/gen+ii+machine/gen+ii+machine/10__1016_slash_j__ijleo__2018__08__125-6-31-30
Average 90 stars, based on 1 article reviews
Gen Ii Solid Source Machine, supplied by Varian Medical, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/gen+ii+machine/gen+ii+machine/10__1016_slash_j__ijleo__2018__08__125-6-31-30
Average 90 stars, based on 1 article reviews
gen ii solid-source machine - by Bioz Stars,
2026-09
90/100 stars
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other:Article Title: The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices Article Snippet: The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In 0.2 Ga 0.8 As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices Yung-Hui Yeh and Joseph Ya-min Lee Citation: Journal of Applied Physics 81, 6921 (1997); doi: 10.1063/1.365254 View online: http://dx.doi.org/10.1063/1.365254 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/81/10?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Influence of dielectric deposition parameters on the In 0.2 Ga 0.8 As / GaAs quantum well intermixing by impurity-free vacancy disordering J. Appl.. Phys.. 92, 1386 (2002); 10.1063/1.1486027 Dependence of band gap energy shift of In 0.2 Ga 0.8 As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiO x and SiN x capping layers J. Appl. Article Title: Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures Article Snippet: Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures P. Borri, M. Gurioli, M. Colocci, F. Martelli, M. Capizzi, A. Patané, and A. Polimeni Citation: Journal of Applied Physics 80, 3011 (1996); doi: 10.1063/1.363160 View online: http://dx.doi.org/10.1063/1.363160 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/80/5?ver=pdfcov Published by the AIP Publishing Articles you may be interested in The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy J. Appl.. Phys.. 80, 6855 (1996); 10.1063/1.363752 Photoluminescence studies of InGaAs/InAlAs strained double quantum wells J. Appl. Article Title: Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure Article Snippet: Optical characterization of real-space hot-electron transfer in a strained quantum well heterostructure Yung-Hui Yeh, Jiun-Tsuen Lai, and Joseph Ya-min Lee Citation: Journal of Applied Physics 81, 3607 (1997); View online: https://doi.org/10.1063/1.365477 View Table of Contents: http://aip.scitation.org/toc/jap/81/8 Published by the American Institute of Physics Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure Yung-Hui Yeh, Jiun-Tsuen Lai, and Joseph Ya-min Leea) Department of Electrical Engineering and Materials Science Center, Tsing-Hua University, Hsinchu, Taiwan, Republic of China ~Received 30 July 1996; accepted for publication 27 December 1996!. Real-space transfer ~RST! light-emitting transistors are implemented with a strained GaAs/InGaAs/ GaAs quantum well heterostructure fabricated on GaAs substrates.. The device energy band diagrams are simulated by using the MEDICI program. |